New Study Reveals Phonon Properties of β-MoB2
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According to research published in Physical Review Research recently, a team led by Prof. LUO Xuan from Institute of Solid State Physics, Hefei Institutes of Physical Science of Chinese Academy of Sciences discovered the existence of stacking faults in the lattice structure of topological phononic β-MoB2 single crystal.
The metal diboride compounds with a boron hexagonal ring structure have attracted significant attention in the field recently due to their nontrivial topology and abnormal superconductivity (SC) under pressure and doping. β-MoB2 has been identified as a topological phonon material, and performs a structural transition and two SC transition under pressure. Specifically, SC I corresponds to β-MoB2, while SC II corresponds to α-MoB2. Currently, the physical origin of SC II has been clarified, while SC I remains incomprehensible. Therefore, further investigations of the phonon properties of β-MoB2 corresponding to SC I are necessary.
In this study, the research team obtained high-quality β-MoB2 single crystals by improving the crystal growth process, and further investigated its phonon properties through systematic Raman spectroscopy measurements and theoretical calculations. The study revealed the presence of two anomalous Raman modes on the edge plane of β-MoB2 single crystal, and they persist even at low temperatures of 4.2K.
Subsequently, the research team employed theoretical calculations to elucidate the origin of these two anomalous Raman modes. Based on the theoretical results, the surface phonon on the edge plane of β-MoB2 were ruled out as the origin of new modes. Additionally, isotopic splitting of boron and higher-order Raman scattering origins were also eliminated based on the peak intensity ratios.
Ultimately, according to the symmetry analysis, the emergence of these anomalous modes was attributed to the distortion of the B atomic layer in the lattice structure.
This work provides crucial structural information for understanding the rich superconducting behaviors of topological phonon materials under external conditions.
Prof. LUO Xuan
E-mail: xluo@issp.ac.cn